PHD24N03 datasheet(1/8 Pages) PHILIPS

Part #	PHD24N03

Description	TrenchMOS transistor Logic level FET

Download	8 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

1 / 8 page

Philips Semiconductors

Preliminary specification

TrenchMOS

 transistor

PHD24N03LT

Logic level FET

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

V

DSS = 30 V

• Very low on-state resistance

• Fast switching

I

D = 24 A

• Stable off-state characteristics

• High thermal cycling performance

R

DS(ON) ≤ 56 mΩ (VGS = 5 V)

• Low thermal resistance

R

DS(ON) ≤ 50 mΩ (VGS = 10 V)

GENERAL DESCRIPTION

PINNING

SOT428 (DPAK)

N-channel

enhancement

mode,

DESCRIPTION

logic

level,

field-effect

power

transistor in a plastic envelope

1

gate

using ’trench’ technology. The

device

has

very

low

on-state

2

drain

1

resistance. It is intended for use in

dc to dc converters and general

3

source

purpose switching applications.

tab

drain

The PHD24N03LT is supplied in the

SOT428 (DPAK) surface mounting

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 175˚C

-

30

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 175˚C; RGS = 20 kΩ

-30

V

GS

Gate-source voltage

-

± 13

V

I

D

Continuous drain current

T

mb = 25 ˚C

-

24

A

T

mb = 100 ˚C

-

20

A

I

DM

Pulsed drain current

T

mb = 25 ˚C

-

96

A

P

D

Total power dissipation

T

mb = 25 ˚C

-

60

W

T

j, Tstg

Operating junction and

- 55

175

˚C

storage temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction

-

2.5

K/W

to mounting base

R

th j-a

Thermal resistance junction

pcb mounted, minimum footprint

50

-

K/W

to ambient

d

g

s

1

2

3

tab

1 it is not possible to make connection to pin 2 of the SOT428 package.

December 1999

1

Rev 1.100

Similar Part No. - PHD24N03

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD20N06T	307Kb / 13P	N-channel TrenchMOS transistor Rev. 01-22 February 2001
NXP Semiconductors	PHD20N06T	379Kb / 12P	N-channel TrenchMOS standard level FET Rev. 02-1 December 2009
VBsemi Electronics Co.,...	PHD20N06T	896Kb / 6P	N-Channel 60-V (D-S) MOSFET
Nexperia B.V. All right...	PHD20N06T	860Kb / 12P	N-channel TrenchMOS standard level FET Rev. 02 - 1 December 2009
VBsemi Electronics Co.,...	PHD20N06T118	896Kb / 6P	N-Channel 60-V (D-S) MOSFET

More results

Similar Description - PHD24N03

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BUK9514-55	53Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.000
	BUK9524-55	63Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.100
	BUK9528-55	64Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.100
	PHB11N06LT	76Kb / 9P	TrenchMOS transistor Logic level FET September 1998 Rev 1.000
	PHN1011	115Kb / 7P	TrenchMOS transistor Logic level FET June 1999 Rev 1.100
	BUK9520-55	63Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.100
	PHP37N06LT	79Kb / 10P	TrenchMOS transistor Logic level FET September 1998 Rev 1.400
	BUK9606-30	51Kb / 8P	TrenchMOS transistor Logic level FET December 1997 Rev 1.100
	BUK9608-55	68Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.000
	BUK9610-30	52Kb / 8P	TrenchMOS transistor Logic level FET December 1997 Rev 1.100
	BUK9614-55	56Kb / 8P	TrenchMOS transistor Logic level FET April 1998 Rev 1.000

More results

PHD24N03 Datasheet(PDF) 1 Page - NXP Semiconductors

PHD24N03 Datasheet(HTML) 1 Page - NXP Semiconductors

Similar Part No. - PHD24N03

Similar Description - PHD24N03

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL