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PHD95N03LT Datasheet(PDF) 9 Page - NXP Semiconductors |
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PHD95N03LT Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 13 page Philips Semiconductors PHD95N03LT N-channel enhancement mode field-effect transistor Product data Rev. 01 — 18 July 2001 9 of 13 9397 750 08216 © Philips Electronics N.V. 2001. All rights reserved. 9. Package outline Fig 14. SOT428 (D-PAK). REFERENCES OUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT428 TO-252 SC-63 98-04-07 99-09-13 0 10 20 mm scale Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped) SOT428 E b2 D1 wA M bc b1 L1 L 13 2 D E1 HE L2 Note 1. Measured from heatsink back to lead. e1 e A A2 A A1 y seating plane mounting base A1 (1) D max. b D1 max. E max. HE max. w y max. A2 b2 b1 max. c E1 min. ee1 L1 min. L2 L A max. UNIT DIMENSIONS (mm are the original dimensions) 0.2 0.2 mm 2.38 2.22 0.65 0.45 0.89 0.71 0.89 0.71 1.1 0.9 5.36 5.26 0.4 0.2 6.22 5.98 4.81 4.45 2.285 4.57 10.4 9.6 0.5 0.7 0.5 6.73 6.47 4.0 2.95 2.55 |
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