Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

PHE13005

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CEV

Collector cut-off current

1

V

-

-

1.0

mA

I

CEV

V

-

-

5.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

1

mA

V

CEOsust

Collector-emitter sustaining voltage

I

400

-

-

V

V

CEsat

Collector-emitter saturation voltage

I

-

0.1

0.5

V

V

CEsat

I

-

0.2

0.6

V

V

CEsat

I

-

0.3

1.0

V

V

BEsat

Base-emitter saturation voltage

I

-

0.85

1.2

V

V

BEsat

I

-

0.92

1.6

V

h

FE

DC current gain

I

10

20

60

h

FEsat

I

8

17

40

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

R

t

s

Turn-off storage time

2.7

4

µs

t

f

Turn-off fall time

0.3

0.9

µs

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

1.2

2

µs

t

f

Turn-off fall time

0.1

0.5

µs

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

1.4

4

µs

t

f

Turn-off fall time

0.16

0.9

µs

1 Measured with half sine-wave voltage (curve tracer).

February 1999

2

Rev 1.000