K7I641884M-CI30 datasheet(10/18 Pages) SAMSUNG

Part #	K7I641884M-CI30

Description	72Mb DDRII SRAM Specification

Download	18 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

10 / 18 page

2Mx36 & 4Mx18 DDRII CIO b4 SRAM

K7I643684M

K7I641884M

- 10 -

Rev. 1.3 March 2007

ABSOLUTE MAXIMUM RATINGS*

*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. VDDQ must not exceed VDD during normal operation.

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VDD Supply Relative to VSS

VDD

-0.5 to 2.9

V

Voltage on VDDQ Supply Relative to VSS

VDDQ

-0.5 to VDD

V

Voltage on Input Pin Relative to VSS

VIN

-0.5 to VDD+0.3

V

Storage Temperature

TSTG

-65 to 150

°C

Operating Temperature (Commercial / Industrial)

TOPR

0 to 70 / -40 to 85

°C

Storage Temperature Range Under Bias

TBIAS

-10 to 85

°C

DC ELECTRICAL CHARACTERISTICS(VDD=1.8V ±0.1V, TA=0°C to +70°C)

Notes: 1. Minimum cycle. IOUT=0mA.

2. |IOH|=(VDDQ/2)/(RQ/5)

±15% for 175Ω ≤ RQ ≤ 350Ω. |IOL|=(VDDQ/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.

3. Minimum Impedance Mode when ZQ pin is connected to VDDQ.

4. Operating current is calculated with 50% read cycles and 50% write cycles.

5. Standby Current is only after all pending read and write burst operations are completed.

6. Programmable Impedance Mode.

7. These are DC test criteria. DC design criteria is VREF

±50mV. The AC VIH/VIL levels are defined separately for measuring timing parameters.

8. VIL (Min)DC=

-0.3V, VIL (Min)AC=-1.5V(pulse width ≤ 3ns).

9. VIH (Max)DC=

VDDQ+0.3, VIH (Max)AC=VDDQ+0.85V(pulse width ≤ 3ns).

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT NOTES

Input Leakage Current

IIL

VDD=Max ; VIN=VSS to VDDQ

-2

+2

µA

Output Leakage Current

IOL

Output Disabled,

-2

+2

µA

Operating Current (x36):

QDR mode

ICC

VDD=Max, IOUT=0mA

Cycle Time

≥ tKHKH Min

-30

-

900

mA

1,4

-25

-

800

-20

-

700

-16

650

Operating Current (x18):

QDR mode

ICC

VDD=Max, IOUT=0mA

Cycle Time

≥ tKHKH Min

-30

-

850

mA

1,4

-25

-

750

-20

-

650

-16

-

600

Standby Current(NOP):

QDR mode

ISB1

Device deselected, IOUT=0mA,

f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-30

-

400

mA

1,5

-25

-

380

-20

-

360

-16

-

340

Output High Voltage

VOH1

VDDQ/2-0.12 VDDQ/2+0.12

V

2,6

Output Low Voltage

VOL1

VDDQ/2-0.12 VDDQ/2+0.12

V

2,6

Output High Voltage

VOH2

IOH=-1.0mA

VDDQ-0.2

VDDQ

V3

Output Low Voltage

VOL2

IOL=1.0mA

VSS

0.2

V

3

Input Low Voltage

VIL

-0.3

VREF-0.1

V

7,8

Input High Voltage

VIH

VREF+0.1

VDDQ+0.3

V

7,9

OPERATING CONDITIONS (0°C ≤ TA ≤ 70°C)

PARAMETER

SYMBOL

MIN

MAX

UNIT

Supply Voltage

VDD

1.7

1.9

V

VDDQ

1.4

1.9

V

Reference Voltage

VREF

0.68

0.95

V

Similar Part No. - K7I641884M-CI30

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K7I641882M	309Kb / 17P	72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
	K7I641882M	417Kb / 18P	2Mx36 & 4Mx18 DDRII CIO b2 SRAM
	K7I641882M-EI16	309Kb / 17P	72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
	K7I641882M-EI20	309Kb / 17P	72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
	K7I641882M-EI25	309Kb / 17P	72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)

More results

Similar Description - K7I641884M-CI30

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K7J643682M	320Kb / 17P	72Mb M-die DDRII SRAM Specification
	K7I643682M	309Kb / 17P	72Mb M-die DDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant)
	K7I163682B	416Kb / 18P	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
	K7I163684B	422Kb / 18P	512Kx36 & 1Mx18 DDRII CIO b4 SRAM
	K7I323684C	419Kb / 18P	1Mx36 & 2Mx18 DDRII CIO b4 SRAM
	K7I323682M	377Kb / 17P	1Mx36 & 2Mx18 DDRII CIO b2 SRAM
	K7I643682M	417Kb / 18P	2Mx36 & 4Mx18 DDRII CIO b2 SRAM
	K7K1636T2C	407Kb / 19P	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
	K7K1636U2C	600Kb / 19P	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
	K7K3236T2C	406Kb / 19P	1Mx36 & 2Mx18 DDRII CIO b2 SRAM

More results

K7I641884M-CI30 Datasheet(PDF) 10 Page - Samsung semiconductor

K7I641884M-CI30 Datasheet(HTML) 10 Page - Samsung semiconductor

Similar Part No. - K7I641884M-CI30

Similar Description - K7I641884M-CI30

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL