PHN203 datasheet(4/7 Pages) PHILIPS

Part #	PHN203

Description	Dual N-channel enhancement mode TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Dual N-channel enhancement mode

PHN203

TrenchMOS

TM transistor

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

R

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

PHN203

0

1

2

3

4

5

6

7

8

9

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

2.6 V

2.8 V

3 V

3.6 V

Tj = 25 C

VGS = 5 V

3.2 V

3.4 V

10V

PHN203

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

012

34567

89

10

Drain current, ID (A)

Transconductance, gfs (S)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

PHN203

0

0.1

0.2

0.3

0.4

0.5

01234

56789

10

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS =5 V

2.6V 2.8V

3.4V

10V

Tj = 25 C

3.6V

3.2 V

3 V

-50

0

50

100

150

0

0.5

1

1.5

2

SOT223 30V Trench

Tj / C

a

Normalised RDS(ON) = f(Tj)

PHN203

0

1

2

3

4

5

6

7

8

9

10

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

-60

-40

-20

0

20

40

60

80

100 120 140

Tj / C

VGS(TO) / V

4

3

2

1

0

max.

typ.

min.

January 1999

4

Rev 1.000

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