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MRF1518NT1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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MRF1518NT1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 18 page MRF1518NT1 1 RF Device Data Freescale Semiconductor RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Features • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request • N Suffix Indicates Lead-Free Terminations. RoHS Compliant. • Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +40 Vdc Gate-Source Voltage VGS ±20 Vdc Drain Current — Continuous ID 4 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 62.5 0.50 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 150 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case RθJC 2 °C/W Table 3. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 1 260 °C 1. Calculated based on the formula PD = 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Document Number: MRF1518N Rev. 9, 9/2006 Freescale Semiconductor Technical Data MRF1518NT1 520 MHz, 8 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-03, STYLE 1 PLD-1.5 PLASTIC G D S TJ– TC RθJC © Freescale Semiconductor, Inc., 2006. All rights reserved. |
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