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PHP125N06T Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHP125N06T Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor PHP125N06T Standard level FET REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 75 A current I DRM Pulsed reverse drain current - - 240 A V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.85 1.2 V I F = 75 A; VGS = 0 V - 1.0 - V t rr Reverse recovery time I F = 75 A; -dIF/dt = 100 A/µs; - 65 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.18 - µC AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 75 A; VDD ≤ 25 V; - - 500 mJ unclamped inductive turn-off V GS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C energy December 1997 3 Rev 1.100 |
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