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PHP20N06T Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHP20N06T Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page  Philips Semiconductors PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Product specification Rev. 01 — 22 February 2001 5 of 15 9397 750 07894 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C55 −− V Tj = −55 °C50 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C2 3 4 V Tj = 175 °C1 −− V Tj = −55 °C −− 4.4 V IDSS drain-source leakage current VDS = 55 V; VGS =0V Tj =25 °C − 0.05 10 µA Tj = 175 °C −− 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V − 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =10A; Figure 7 and 8 Tj =25 °C − 64 75 m Ω Tj = 175 °C −− 150 m Ω Dynamic characteristics Qg(tot) total gate charge ID = 25 A; VDD =44V; VGS =10V; Figure 14 − 11 − nC Qgs gate-source charge − 3 − nC Qgd gate-drain (Miller) charge − 6 − nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 − 320 483 pF Coss output capacitance − 92 113 pF Crss reverse transfer capacitance − 64 90 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =10V; RG =10 Ω; − 10 − ns tr rise time − 50 − ns td(off) turn-off delay time − 70 − ns tf fall time − 40 − ns Ld internal drain inductance from drain lead 6 mm from package to centre of die − 4.5 − nH from contact screw on mounting base to centre of die SOT78 − 3.5 − nH from upper edge of drain mounting base to centre of die SOT404 − 2.5 − nH Ls internal source inductance from source lead to source bond pad − 7.5 − nH |
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