Philips Semiconductors

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Product specification

Rev. 01 — 22 February 2001

2 of 15

9397 750 07894

© Philips Electronics N.V. 2001. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

−

55

V

drain current (DC)

−

20.3

A

total power dissipation

−

62

W

junction temperature

−

175

°C

drain-source on-state resistance

75

m

Ω

−

150

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

−

55

V

drain-gate voltage (DC)

55

V

gate-source voltage (DC)

−±20

V

drain current (DC)

Figure 2 and 3

−

20.3

A

−

14.3

A

peak drain current

Figure 3

−

81

A

total power dissipation

−

62

W

storage temperature

−55

+175

°C

operating junction temperature

−55

+175

°C

Source-drain diode

reverse drain current (DC)

−

20.3

A

pulsed reverse drain current

−

81

A

Avalanche ruggedness

non-repetitive avalanche energy

−

30.3

mJ