 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
PHP212 Datasheet(PDF) 8 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
PHP212 Datasheet(HTML) 8 Page - NXP Semiconductors |
|
|
8 / 12 page  1997 Jun 18 8 Philips Semiconductors Product specification Dual P-channel enhancement mode MOS transistor PHP212 Fig.10 Source current as a function of source-drain diode forward voltage; typical values. VGD =0. (1) Tamb = 150 °C; tp = 300 µs; δ =0. (2) Tamb =25 °C; tp = 300 µs; δ =0. (3) Tamb = −65 °C; tp = 300 µs; δ =0. handbook, halfpage 0 −0.4 −0.8 −1.2 0 −10 −8 −6 −2 −4 MGG356 IS (A) VSD (V) (1) (2) (3) Fig.11 Drain-source on-state resistance as a function of gate-source voltage; typical values. handbook, halfpage −10 0 −2 −4 −6 −8 103 102 10 MGG357 RDSon (m Ω) VGS (V) (1) (2) (3) (4) (5) (6) Tamb =25 °C; tp = 300 µs; δ =0. VDS ≥ ID × RDSon. (1) ID = 0.1 A. (2) ID = 0.5 A. (3) ID =1A. (4) ID =2A. (5) ID =4A. (6) ID =8A. |
Similar Part No. - PHP212 |
|
Similar Description - PHP212 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
