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PHP2N40E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP2N40E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 4 page Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.5 K/W mounting base R th j-a Thermal resistance junction to - 60 - K/W ambient STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 400 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V I DSS Drain-source leakage current V DS = 400 V; VGS = 0 V; Tj = 25 ˚C - 10 100 µA V DS = 320 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 10 V; ID = 1.25 A - 3.1 3.5 Ω resistance V SD Source-drain diode forward I F = 2.5 A ;VGS = 0 V - 1.4 2.0 V voltage DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 15 V; ID = 1.25 A 0.5 0.9 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 225 315 pF C oss Output capacitance - 30 42 pF C rss Feedback capacitance - 6.0 12 pF Q g(tot) Total gate charge V GS = 10 V; ID = 2.5 A; VDS = 320 V - 12 - nC Q gs Gate to source charge - 2 - nC Q gd Gate to drain (Miller) charge - 6 - nC t d on Turn-on delay time V DD = 30 V; ID = 2.2 A; - 10 15 ns t r Turn-on rise time V GS = 10 V; RGS = 50 Ω; - 30 45 ns t d off Turn-off delay time R GEN = 50 Ω - 3040ns t f Turn-off fall time - 20 30 ns t rr Source-drain diode reverse I F = 2.5 A; -dIF/dt = 100 A/µs; - 350 - ns recovery time Q rr Source-drain diode reverse V GS = 0 V; VR = 100 V - 2.5 - µC recovery charge L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad October 1996 2 Rev 1.000 |
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