PHP2N40E datasheet(2/4 Pages) PHILIPS

Part #	PHP2N40E

Description	PowerMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Objective specification

PowerMOS transistor

PHP2N40E

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction to

-

2.5

K/W

mounting base

R

th j-a

Thermal resistance junction to

-

60

-

K/W

ambient

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

400

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

V

I

DSS

Drain-source leakage current

V

DS = 400 V; VGS = 0 V; Tj = 25 ˚C

-

10

100

µA

V

DS = 320 V; VGS = 0 V; Tj = 125 ˚C

-

0.1

1.0

mA

I

GSS

Gate-source leakage current

V

GS = ±30 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 1.25 A

-

3.1

3.5

Ω

resistance

V

SD

Source-drain diode forward

I

F = 2.5 A ;VGS = 0 V

-

1.4

2.0

V

voltage

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 15 V; ID = 1.25 A

0.5

0.9

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

225

315

pF

C

oss

Output capacitance

-

30

42

pF

C

rss

Feedback capacitance

-

6.0

12

pF

Q

g(tot)

Total gate charge

V

GS = 10 V; ID = 2.5 A; VDS = 320 V

-

12

-

nC

Q

gs

Gate to source charge

-

2

-

nC

Q

gd

Gate to drain (Miller) charge

-

6

-

nC

t

d on

Turn-on delay time

V

DD = 30 V; ID = 2.2 A;

-

10

15

ns

t

r

Turn-on rise time

V

GS = 10 V; RGS = 50 Ω;

-

30

45

ns

t

d off

Turn-off delay time

R

GEN = 50 Ω

-

3040ns

t

f

Turn-off fall time

-

20

30

ns

t

rr

Source-drain diode reverse

I

F = 2.5 A; -dIF/dt = 100 A/µs;

-

350

-

ns

recovery time

Q

rr

Source-drain diode reverse

V

GS = 0 V; VR = 100 V

-

2.5

-

µC

recovery charge

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

October 1996

2

Rev 1.000

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