Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain−Source Breakdown Voltage

60

−

−

V

Breakdown Voltage Temperature

Coefficient

Reference to +25

−

0.064

−

V/

°C

Static Drain−Source ON Resistance

−

−

12

Ω

Gate Threshold Voltage

2.0

−

4.0

V

Forward Transconductance

69

−

−

mhos

Drain−to−Source Leakage Current

−

−

25

µA

−

−

250

µA

Gate−Source Leakage, Forward

−

−

100

nA

Gate−Source Leakage, Reverse

−

−

−100

nA

Total Gate Charge

−

−

130

nC

Gate−Source Charge

−

−

28

nC

Gate−Drain (“Miller”) Charge

−

−

44

nC

Turn−On Delay Time

V

10V Note 5

−

12

−

ns

Rise Time

,

−

78

−

ns

Turn−Off Delay Time

−

48

−

ns

Fall Time

−

53

−

ns

Internal Drain Inductance

Between lead, 6mm (0.25”) from

package and center of die contact

−

4.5

−

nH

Internal Source Inductance

package and center of die contact

−

7.5

−

nH

Input Capacitance

−

3210

−

pF

Output Capacitance

−

690

−

pF

Reverse Transfer Capacitance

−

140

−

pF

Source−Drain Diode Ratings and Characteristics

Continuous Source Current

(Body Diode) Note 6

−

−

84

A

Pulse Source Current

(Body Diode) Note 2

−

−

330

A

Diode Forward Voltage

−

−

1.3

V

Reverse Recovery Time

Note 5

−

73

110

ns

Reverse Recovery Charge

Note 5

−

220

330

µC

Forward Turn−On Time

Intrinsic turn−on time is neglegible

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 5. Pulse Width

≤ 400µs, Duty Cycle ≤ 2%.

Note 6. Calculated continuous current based on maximum allowable junction temperature. Package

limitation current is 75A.