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PHP36N06E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP36N06E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification PowerMOS transistor PHP36N06E STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 60 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.1 3.0 4.0 V I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±30 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 10 V; ID = 20 A - 30 38 m Ω resistance DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 20 A 7 14 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 900 1600 pF C oss Output capacitance - 420 600 pF C rss Feedback capacitance - 160 275 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 15 30 ns t r Turn-on rise time V GS = 10 V; RGS = 50 Ω; - 55 90 ns t d off Turn-off delay time R gen = 50 Ω - 75 125 ns t f Turn-off fall time - 60 100 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead - 7.5 - nH soldering point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 41 A current I DRM Pulsed reverse drain current - - - 164 A V SD Diode forward voltage I F = 41 A ; VGS = 0 V - 0.95 2.0 V t rr Reverse recovery time I F = 41 A; -dIF/dt = 100 A/µs; - 60 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.30 - µC AVALANCHE LIMITING VALUE T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 41 A ; VDD ≤ 25 V ; - - 100 mJ unclamped inductive turn-off V GS = 10 V ; RGS = 50 Ω energy August 1996 2 Rev 1.000 |
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