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PHP37N06T Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP37N06T Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor PHP37N06T Standard level FET STATIC CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 55 - - V voltage T j = -55˚C 50 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 2.0 3.0 4.0 V T j = 175˚C 1.0 - - V T j = -55˚C - - 4.4 I DSS Zero gate voltage drain current V DS = 55 V; VGS = 0 V; - 0.05 10 µA T j = 175˚C - - 500 µA I GSS Gate source leakage current V GS = ±10 V; VDS = 0 V - 0.04 1 µA T j = 175˚C - - 20 µA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA; 16 - - V R DS(ON) Drain-source on-state V GS = 10 V; ID = 17 A - 28 35 m Ω resistance T j = 175˚C - - 74 m Ω DYNAMIC CHARACTERISTICS T mb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 15 A 4 - - S Q g(tot) Total gate charge I D = 30 A; VDD = 44 V; VGS = 10 V - 26 - nC Q gs Gate-source charge - 7.5 - nC Q gd Gate-drain (Miller) charge - 11 - nC C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 700 880 pF C oss Output capacitance - 200 240 pF C rss Feedback capacitance - 100 140 pF t d on Turn-on delay time V DD = 30 V; ID = 15 A; - 11 16 ns t r Turn-on rise time V GS = 10 V; RG = 10 Ω - 3550ns t d off Turn-off delay time Resistive load - 25 35 ns t f Turn-off fall time - 22 29 ns L d Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - 37 A current I DRM Pulsed reverse drain current - - 148 A V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.95 1.2 V I F = 34 A; VGS = 0 V - 1.0 - t rr Reverse recovery time I F = 34 A; -dIF/dt = 100 A/µs; - 40 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.16 - µC December 1997 2 Rev 1.200 |
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