PHP3N20L datasheet(2/7 Pages) PHILIPS

Part #	PHP3N20L

Description	PowerMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistor

PHP3N20L

Logic level FET

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

200

-

V

voltage

∆V

(BR)DSS /

Drain-source breakdown

V

DS = VGS; ID = 0.25 mA

-

0.25

-

V/K

∆T

j

voltage temperature coefficient

R

DS(ON)

Drain-source on resistance

V

GS = 5 V; ID = 2 A

-

0.77

1.5

Ω

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

1.0

1.5

2.0

V

g

fs

Forward transconductance

V

DS = 50 V; ID = 2 A

0.8

3.0

-

S

I

DSS

Drain-source leakage current

V

DS = 200 V; VGS = 0 V

-

0.1

25

µA

V

DS = 160 V; VGS = 0 V; Tj = 150 ˚C

-

1

250

µA

I

GSS

Gate-source leakage current

V

GS = ±15 V; VDS = 0 V

-

10

100

nA

Q

g(tot)

Total gate charge

I

D = 3.3 A; VDD = 160 V; VGS = 5 V

-

7.5

9

nC

Q

gs

Gate-source charge

-

1

3

nC

Q

gd

Gate-drain (Miller) charge

-

4

6

nC

t

d(on)

Turn-on delay time

V

DD = 100 V; ID = 3.3 A;

-

8

-

ns

t

r

Turn-on rise time

R

G = 24 Ω; RD = 30 Ω

-33

-

ns

t

d(off)

Turn-off delay time

-

40

-

ns

t

f

Turn-off fall time

-

36

-

ns

L

d

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

270

-

pF

C

oss

Output capacitance

-

48

-

pF

C

rss

Feedback capacitance

-

17

-

pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

S

Continuous source current

T

mb = 25˚C

-

3.5

A

(body diode)

I

SM

Pulsed source current (body

T

mb = 25˚C

-

14

A

diode)

V

SD

Diode forward voltage

I

S = 3.3 A; VGS = 0 V

-

1.5

V

t

rr

Reverse recovery time

I

S = 3.3 A; VGS = 0 V;

-

90

-

ns

dI/dt = 100 A/

µs

Q

rr

Reverse recovery charge

-

0.5

-

µC

September 1997

2

Rev 1.000

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