SI9750CY datasheet(2/8 Pages) VISHAY

Part #	SI9750CY

Description	In-Rush Current Limit MOSFET Driver

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Manufacturer	VISHAY [Vishay Siliconix]

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Si9750

Vishay Siliconix

www.vishay.com

2

Document Number: 70028

S-40754—Rev. D, 19-Apr-04

ABSOLUTE MAXIMUM RATINGS

Voltages Referenced to Ground

VDD

15 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Boost Voltage

29 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inputs/Outputs

(except Gate, Boost and VRST)

−0.3 to VDD + 0.3 V

. . . . . . . . . . . . . . . . . . . . .

VRST Input Current (0 < VRST < 15 V)

20 mA

. . . . . . . . . . . . . . . . . . . . . . . . . .

Inputs/Outputs Current

20 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RESET Current

3 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

STATUS Current

3 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature

−65 to 125_C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction Temperature

150_C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation (package)a

16-Pin SOICb

900 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Impedance (QJA)

140_C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notes

a.

Device mounted with all leads soldered or welded to PC board.

b.

Derate 7.2 mW/_C above 25_C.

*

Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause permanent

.

damage. Functional operation at conditions other than the operating conditions specified is not implied. Only one Absolute Maximum rating should be applied at any

one time

SPECIFICATIONS

Test Conditions Unless Specified

2.9 V v VDD v 13.2 V

HI/LO GND R

12 5 kW

Limits

0 to 70_C

Parameter

Symbol

2.9 V

VDD

13.2 V

HI/LO = GND, RBIAS = 12.5 kW

LBOOST = 100 mH, CBOOST = 100 nF

Mina

Typb

Maxa

Unit

Supply

Quiescent Current

IQ

ENABLE =Logic Low

4

8

mA

Logic

Enable Turn-On Voltage

VEN(on)

0.3 x VDD

V

Enable Turn-Off Voltage

VEN(off)

0.7 x VDD

V

Enable Source Current

IENSRC

VENABLE = 0V

40

120

mA

Turn-On Time

tON

See Figure 3

5

Turn-Off Time

tOFF

See Figure 3

5

Turn-On Boost

tON(BST)

See Figure 4

600

ms

tOFF Initial Short Circuit

tOFF(ISC)

CGATE = 33 nF, See Figure 6

10

m

tOFF Short Circuit

tOFF(SC)

CGATE = 33 nF, See Figure 7

2

Status Output Voltage

VSTAT

ISINK = 200 mA

0.4

V

Status Output Delay Time

tSTDLY

See Figure 8

25

ms

Status Threshold

VSTATTHR

0.85 x VDD

0.95 x VDD

HI/LO Turn-On Voltage

VHILO(on)

0.7 x VDD

V

HI/LO Turn-Off Voltage

VHILO(off)

0.3 x VDD

Gate Drive

Enhancement Voltage (VGATE − VSENSE)

VGS

8.5

10.5

15

V

Source Current

ISOURCE

VCBOOST = 9 V

1.06

1.30

1.54

mA

Sink Current

ISINK

VCBOOST = 9 V

1.6

2.6

3.7

mA

Current Sense Circuit

Current Sense Amplifier Common Mode

Range

VCMR

0

VDD + 0.3

V

Current Sense Amplifier Voltage Offset

VOS

−3

3

mV

Current Sense Amplifier Bias Current

ISOS

Normal Operation

−0.2

mA

RLIMSET Reference Current

IRLIMSET

18

19.5

21

mA

Current Sense Amplifier Hysteresis

VHYST

12

mV

Current Sense Amplifier Series Offset

VSOS

HI/LO = VDD, VCMR > 0.5 V

20

mV

Power On Reset

RESET Output Voltage

VOP(rst)

IOUT = 1 mA, VDD > 2 V

0.4

V

RESET Output Hysteresisc

VHYST

See Note c

2

mV

RESET Comparator Input Threshold

VRST

See Note c

1.223

1.250

1.277

V

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