PHB50N03 datasheet(4/11 Pages) PHILIPS

Part #	PHB50N03

Description	N-channel TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 11 page

Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PHP50N03LT, PHB50N03LT

Logic level FET

PHD50N03LT

Fig.5. Typical output characteristics

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS)

Fig.8. Typical transconductance

g

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

0

5

10

15

20

25

30

35

40

45

50

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

2.2 V

2.4 V

Tj = 25 C

VGS = 10 V

3.2 V

2.6 V

4.5 V

2.8 V

3 V

5 V

0

5

10

15

20

25

30

0

5

10

15

20

25

30

35

40

Drain current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

175 C

VDS > ID X RDS(ON)

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

0

5

10

15

20

25

30

35

40

45

50

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS =4.5 V

10V

Tj = 25 C

2.8V

3 V

2.6 V

2.2 V

2.4 V

3.2 V

5 V

Normalised On-state Resistance

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2

-60

-40

-20

0

20

40

60

80

100

120

140

160

180

Junction temperature, Tj (C)

0

5

10

15

20

25

30

35

40

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

175 C

Threshold Voltage, VGS(TO) (V)

0

0.25

0.5

0.75

1

1.25

1.5

1.75

2

2.25

-60

-40

-20

0

20

40

60

80

100

120

140

160

180

Junction Temperature, Tj (C)

typical

maximum

minimum

October 1999

4

Rev 1.800

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