PHD66NQ03LT datasheet(5/14 Pages) PHILIPS

Part #	PHD66NQ03LT

Description	N-channel TrenchMOS transistor

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

5 / 14 page

Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Product data

Rev. 02 — 10 December 2001

5 of 14

9397 750 09119

8.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C

25

--V

Tj = −55 °C

22

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

1

1.5

2

V

Tj = 175 °C

0.5

-

V

Tj = −55 °C

-

2.3

V

IDSS

drain-source leakage current

VDS =25V; VGS =0V

Tj =25 °C

-

0.05

10

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±5 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS =5V; ID =25A; Figure 7 and 8

Tj =25 °C

-

12.3

16

m

Ω

Tj = 175 °C

-

22.1

28.8

m

Ω

VGS =10V; ID =25A

Tj =25 °C

-

9.1

12

m

Ω

Dynamic characteristics

gfs

forward transconductance

VDS =25V; ID =30A

-

40

-

S

Qg(tot)

total gate charge

ID = 50 A; VDD =15V; VGS =5V; Figure 13

-

13.5

-

nC

Qgs

gate-source charge

-

7

-

nC

Qgd

gate-drain (Miller) charge

-

3.9

-

nC

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11

-

1150 -

pF

Coss

output capacitance

-

330

-

pF

Crss

reverse transfer capacitance

-

180

-

pF

td(on)

turn-on delay time

VDD =15V; ID = 25 A; VGS =5V;

RG = 5.6 Ω; resistive load

-

1525ns

tr

rise time

-

90

135

ns

td(off)

turn-off delay time

-

25

40

ns

tf

fall time

-

2540ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12

-

0.95

1.2

V

trr

reverse recovery time

IS = 10 A; dIS/dt = −100 A/µs; VGS =0V

-

32

-

ns

Qr

recovered charge

-

20

-

nC

Similar Part No. - PHD66NQ03LT

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PHD66NQ03LT	194Kb / 13P	N-channel TrenchMOS logic level FET Rev. 07-30 June 2009

More results

Similar Description - PHD66NQ03LT

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PSMN057-200P	92Kb / 8P	N-channel TrenchMOS transistor June 2000 Rev 1.000
	PHP23NQ15T	99Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.000
	PHP34NQ10T	115Kb / 12P	N-channel TrenchMOS transistor August 1999 Rev 1.000
	PHX23NQ10T	61Kb / 8P	N-channel TrenchMOS transistor September 1999 Rev 1.000
	PSMN040-200W	86Kb / 7P	N-channel TrenchMOS transistor August 1999 Rev 1.000
New Jersey Semi-Conduct...	IRF630_13	923Kb / 3P	N-channel TrenchMOS transistor
NXP Semiconductors	PSMN009-100W	121Kb / 4P	N-channel TrenchMOS transistor February 1999 Rev 1.000
	PSMN015-100B	146Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
	PSMN130-200D	143Kb / 12P	N-channel TrenchMOS transistor August 1999
	PHP18NQ20T	96Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.000
	PHP27NQ10T	115Kb / 12P	N-channel TrenchMOS transistor August 1999 Rev 1.000

More results

PHD66NQ03LT Datasheet(PDF) 5 Page - NXP Semiconductors

PHD66NQ03LT Datasheet(HTML) 5 Page - NXP Semiconductors

Similar Part No. - PHD66NQ03LT

Similar Description - PHD66NQ03LT

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL