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PHD66NQ03LT Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHD66NQ03LT Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page Philips Semiconductors PHP/PHB/PHD66NQ03LT N-channel TrenchMOS transistor Product data Rev. 02 — 10 December 2001 5 of 14 9397 750 09119 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C 25 --V Tj = −55 °C 22 --V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V IDSS drain-source leakage current VDS =25V; VGS =0V Tj =25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±5 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Figure 7 and 8 Tj =25 °C - 12.3 16 m Ω Tj = 175 °C - 22.1 28.8 m Ω VGS =10V; ID =25A Tj =25 °C - 9.1 12 m Ω Dynamic characteristics gfs forward transconductance VDS =25V; ID =30A - 40 - S Qg(tot) total gate charge ID = 50 A; VDD =15V; VGS =5V; Figure 13 - 13.5 - nC Qgs gate-source charge - 7 - nC Qgd gate-drain (Miller) charge - 3.9 - nC Ciss input capacitance VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11 - 1150 - pF Coss output capacitance - 330 - pF Crss reverse transfer capacitance - 180 - pF td(on) turn-on delay time VDD =15V; ID = 25 A; VGS =5V; RG = 5.6 Ω; resistive load - 1525ns tr rise time - 90 135 ns td(off) turn-off delay time - 25 40 ns tf fall time - 2540ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12 - 0.95 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = −100 A/µs; VGS =0V - 32 - ns Qr recovered charge - 20 - nC |
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