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PHD66NQ03LT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHD66NQ03LT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page Philips Semiconductors PHP/PHB/PHD66NQ03LT N-channel TrenchMOS transistor Product data Rev. 02 — 10 December 2001 3 of 14 9397 750 09119 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM is single pulse; VGS =5V. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 0 40 80 120 0 50 100 150 200 Tmb ( oC) Pder (%) 03aa24 0 40 80 120 0 50 100 150 200 Tmb ( oC) I der (%) P der P tot P tot 25 C ° () ----------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = 03ag19 1 10 102 103 1 10 102 VDS (V) ID (A) tp = 10 µs DC 100 ms 10 ms RDSon = VDS / ID 1 ms 100 µs |
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