Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Product data

Rev. 02 — 10 December 2001

3 of 14

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa16

0

40

80

120

0

50

100

150

200

Tmb (

Pder

(%)

03aa24

0

40

80

120

0

50

100

150

200

Tmb (

I der

(%)

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

03ag19

1

10

102

103

1

10

102

(A)

DC

100 ms

10 ms

1 ms

100 µs