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PHD69N03LT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHD69N03LT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor PHP69N03LT, PHB69N03LTT Logic level FET PHD69N03LT THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 1.2 K/W to mounting base R th j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W to ambient SOT404 and SOT428 packages, pcb - 50 - K/W mounted, minimum footprint AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT W DSS Drain-source non-repetitive I D = 25 A; VDD ≤ 15 V; - 60 mJ unclamped inductive turn-off V GS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C energy ELECTRICAL CHARACTERISTICS T j= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA; 25 - - V voltage T j = -55˚C 22 - - V V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1 1.5 2 V T j = 175˚C 0.5 - - V T j = -55˚C - - 2.3 V R DS(ON) Drain-source on-state V GS = 10 V; ID = 25 A - 8.5 12 m Ω resistance V GS = 5 V; ID = 25 A - 11 14 m Ω V GS = 5 V; ID = 25 A; Tj = 175˚C - - 26 m Ω g fs Forward transconductance V DS = 25 V; ID = 25 A 12 40 - S I GSS Gate source leakage current V GS = ±5 V; VDS = 0 V - 10 100 nA I DSS Zero gate voltage drain V DS = 25 V; VGS = 0 V; - 0.05 10 µA current T j = 175˚C - - 500 µA Q g(tot) Total gate charge I D = 69 A; VDD = 15 V; VGS = 5 V - 26 - nC Q gs Gate-source charge - 7.6 - nC Q gd Gate-drain (Miller) charge - 11 - nC t d on Turn-on delay time V DD = 15 V; ID = 25 A; - 7 15 ns t r Turn-on rise time V GS = 10 V; RG = 5 Ω -50 75 ns t d off Turn-off delay time Resistive load - 82 120 ns t f Turn-off fall time - 59 75 ns L d Internal drain inductance Measured tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT78 package only) L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 20 V; f = 1 MHz - 1700 - pF C oss Output capacitance - 475 - pF C rss Feedback capacitance - 300 - pF October 1999 2 Rev 1.600 |
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