PHD69N03LT datasheet(2/11 Pages) PHILIPS

Part #	PHD69N03LT

Description	N-channel TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 11 page

Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PHP69N03LT, PHB69N03LTT

Logic level FET

PHD69N03LT

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

-

1.2

K/W

to mounting base

R

th j-a

Thermal resistance junction

SOT78 package, in free air

-

60

-

K/W

to ambient

SOT404 and SOT428 packages, pcb

-

50

-

K/W

mounted, minimum footprint

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

W

DSS

Drain-source non-repetitive

I

D = 25 A; VDD ≤ 15 V;

-

60

mJ

unclamped inductive turn-off

V

GS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C

energy

ELECTRICAL CHARACTERISTICS

T

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA;

25

-

V

voltage

T

j = -55˚C

22

-

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

1

1.5

2

V

T

j = 175˚C

0.5

-

V

T

j = -55˚C

-

2.3

V

R

DS(ON)

Drain-source on-state

V

GS = 10 V; ID = 25 A

-

8.5

12

m

Ω

resistance

V

GS = 5 V; ID = 25 A

-

11

14

m

Ω

V

GS = 5 V; ID = 25 A; Tj = 175˚C

-

26

m

Ω

g

fs

Forward transconductance

V

DS = 25 V; ID = 25 A

12

40

-

S

I

GSS

Gate source leakage current V

GS = ±5 V; VDS = 0 V

-

10

100

nA

I

DSS

Zero gate voltage drain

V

DS = 25 V; VGS = 0 V;

-

0.05

10

µA

current

T

j = 175˚C

-

500

µA

Q

g(tot)

Total gate charge

I

D = 69 A; VDD = 15 V; VGS = 5 V

-

26

-

nC

Q

gs

Gate-source charge

-

7.6

-

nC

Q

gd

Gate-drain (Miller) charge

-

11

-

nC

t

d on

Turn-on delay time

V

DD = 15 V; ID = 25 A;

-

7

15

ns

t

r

Turn-on rise time

V

GS = 10 V; RG = 5 Ω

-50

75

ns

t

d off

Turn-off delay time

Resistive load

-

82

120

ns

t

f

Turn-off fall time

-

59

75

ns

L

d

Internal drain inductance

Measured tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

(SOT78 package only)

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 20 V; f = 1 MHz

-

1700

-

pF

C

oss

Output capacitance

-

475

-

pF

C

rss

Feedback capacitance

-

300

-

pF

October 1999

2

Rev 1.600

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