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PHB78NQ03LT Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHB78NQ03LT Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page Philips Semiconductors PHP/PHB/PHD78NQ03LT N-channel enhancement mode field-effect transistor Product data Rev. 01 — 14 November 2001 6 of 14 9397 750 08916 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °CTj =25 °C and 175 °C; VDS ≥ ID x RDSON Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 60 40 20 0 ID (A) 0 0.4 0.8 1.2 1.6 2 VDS (V) 5 V VGS = 3 V 3.5 V 4 V 10 V 4.5 V 6 V 003aaa169 Tj = 175 ο C Tj = 25 ο C 0 2 3 4 VGS (V) 40 30 20 0 10 ID (A) 003aaa170 40 20 0 RDSon (m Ω) ID (A) 010 20 30 40 50 VGS = 3 V 3.5 V 5 V 6 V 10 V 4 V 60 003aaa171 03aa27 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj ( oC) a a R DSon R DSon 25 C ° () ----------------------------- = |
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