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PHE83N03LT Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PHE83N03LT
Description  N-channel TrenchMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHE83N03LT Datasheet(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
PHP83N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 23 January 2001
7 of 15
9397 750 07815
© Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 175 °C; VDS > ID × RDSon
VGS =0V;f=1MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ad90
0
15
30
45
60
75
90
0
1530
4560
75
ID (A)
gfs
(S)
Tj = 25 ºC
175 ºC
VDS > ID x RDSon
03ad92
102
103
104
10-1
1
10
102
VDS (V)
Ciss,
Coss,
Crss
(pF)
Ciss
Coss
Crss


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