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PHE83N03LT Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHE83N03LT Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 15 page Philips Semiconductors PHP83N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 23 January 2001 7 of 15 9397 750 07815 © Philips Electronics N.V. 2001. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C and 175 °C; VDS > ID × RDSon VGS =0V;f=1MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa33 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 max typ min V GS(th) T j ( o C) (V) 03aa36 0 0.5 1 1.5 2 2.5 3 max typ min I D V GS (V) 10-6 10-5 10-4 10-3 10-2 10-1 (A) 03ad90 0 15 30 45 60 75 90 0 1530 4560 75 ID (A) gfs (S) Tj = 25 ºC 175 ºC VDS > ID x RDSon 03ad92 102 103 104 10-1 1 10 102 VDS (V) Ciss, Coss, Crss (pF) Ciss Coss Crss |
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