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PHP98N03LT Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PHP98N03LT
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP98N03LT Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 18 October 2001
2 of 14
9397 750 08726
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
-
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
75
A
Ptot
total power dissipation
Tmb =25 °C
-
111
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =10V; ID = 25 A
5.2
5.9
m
Tj =25 °C; VGS =5V; ID = 25 A
6.2
7.3
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
-
25
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20kΩ
-25
V
VGS
gate-source voltage (DC)
-
±15
V
VGSM
gate-source voltage
tp ≤ 50 µs; pulsed;
duty cycle 25%; Tj ≤ 150 °C
-
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V; Figure 2 and 3
-75
A
Tmb = 100 °C; VGS =5V; Figure 2
-66
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
240
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
111
W
Tstg
storage temperature
−55
+175
°C
Tj
operating junction temperature
−55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs
-
240
A


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