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PHP98N03LT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP98N03LT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page Philips Semiconductors PHP/PHB/PHD98N03LT N-channel enhancement mode field-effect transistor Product data Rev. 02 — 18 October 2001 2 of 14 9397 750 08726 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to175 °C - 25 V ID drain current (DC) Tmb =25 °C; VGS =5V - 75 A Ptot total power dissipation Tmb =25 °C - 111 W Tj junction temperature - 175 °C RDSon drain-source on-state resistance Tj =25 °C; VGS =10V; ID = 25 A 5.2 5.9 m Ω Tj =25 °C; VGS =5V; ID = 25 A 6.2 7.3 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to175 °C - 25 V VDGR drain-gate voltage (DC) Tj =25to175 °C; RGS =20kΩ -25 V VGS gate-source voltage (DC) - ±15 V VGSM gate-source voltage tp ≤ 50 µs; pulsed; duty cycle 25%; Tj ≤ 150 °C - ±20 V ID drain current (DC) Tmb =25 °C; VGS =5V; Figure 2 and 3 -75 A Tmb = 100 °C; VGS =5V; Figure 2 -66 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 240 A Ptot total power dissipation Tmb =25 °C; Figure 1 - 111 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb =25 °C - 75 A ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs - 240 A |
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