PHD98N03LT datasheet(5/14 Pages) PHILIPS

Part #	PHD98N03LT

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHP/PHB/PHD98N03LT

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 02 — 18 October 2001

5 of 14

9397 750 08726

8.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C

25

--V

Tj = −55 °C

22

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

1

1.5

2

V

Tj = 175 °C

0.5

-

V

Tj = −55 °C

-

2.3

V

IDSS

drain-source leakage current

VDS =25V; VGS =0V

Tj =25 °C

-

0.05

1

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±15 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS =5V; ID =25A; Figure 7 and 8

Tj =25 °C

-

6.2

7.3

m

Ω

Tj = 175 °C

-

10.5

12.4

m

Ω

VGS = 10 V; ID =25A; Figure 7 and 8

Tj =25 °C

-

5.2

5.9

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 50 A; VDD =15V; VGS =5V; Figure 13

-40

-

nC

Qgs

gate-source charge

-

16

-

nC

Qgd

gate-drain (Miller) charge

-

15

-

nC

Ciss

input capacitance

VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11

-

3000 -

pF

Coss

output capacitance

-

710

-

pF

Crss

reverse transfer capacitance

-

510

-

pF

td(on)

turn-on delay time

VDD =15V; ID = 12.5 A; VGS =5V;

RG = 5.6 Ω; resistive load

-18

-

ns

tr

turn-on rise time

-

80

-

ns

td(off)

turn-off delay time

-

104

-

ns

tf

turn-off fall time

-

104

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12

-

0.9

1.2

V

trr

reverse recovery time

IS = 10 A; dIS/dt = −100 A/µs; VGS =0V

-

37

-

ns

Qr

recovered charge

-

20

-

nC

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