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PHD98N03LT Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHD98N03LT Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page Philips Semiconductors PHP/PHB/PHD98N03LT N-channel enhancement mode field-effect transistor Product data Rev. 02 — 18 October 2001 5 of 14 9397 750 08726 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C 25 --V Tj = −55 °C 22 --V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V IDSS drain-source leakage current VDS =25V; VGS =0V Tj =25 °C - 0.05 1 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A; Figure 7 and 8 Tj =25 °C - 6.2 7.3 m Ω Tj = 175 °C - 10.5 12.4 m Ω VGS = 10 V; ID =25A; Figure 7 and 8 Tj =25 °C - 5.2 5.9 m Ω Dynamic characteristics Qg(tot) total gate charge ID = 50 A; VDD =15V; VGS =5V; Figure 13 -40 - nC Qgs gate-source charge - 16 - nC Qgd gate-drain (Miller) charge - 15 - nC Ciss input capacitance VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11 - 3000 - pF Coss output capacitance - 710 - pF Crss reverse transfer capacitance - 510 - pF td(on) turn-on delay time VDD =15V; ID = 12.5 A; VGS =5V; RG = 5.6 Ω; resistive load -18 - ns tr turn-on rise time - 80 - ns td(off) turn-off delay time - 104 - ns tf turn-off fall time - 104 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12 - 0.9 1.2 V trr reverse recovery time IS = 10 A; dIS/dt = −100 A/µs; VGS =0V - 37 - ns Qr recovered charge - 20 - nC |
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