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MMBT2222LT1_06 Datasheet(PDF) 3 Page - Comchip Technology

Part No. MMBT2222LT1_06
Description  General Purpose Transistors NPN Silicon
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Maker  COMCHIP [Comchip Technology]
Homepage  http://www.comchiptech.com
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MMBT2222LT1, MMBT2222ALT1
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
Max
Min
Symbol
SMALL− SIGNAL CHARACTERISTICS
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
rb, Cc
150
ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A
NF
4.0
dB
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
(VCC = 30 Vdc, VBE(off) = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
10
ns
Rise Time
tr
25
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
225
ns
Fall Time
tf
60
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
−2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
−14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
−4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200
300
500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
TJ = 125°C
25°C
−55°C
VCE = 1.0 V
VCE = 10 V




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