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MMBT2222ALT1 Datasheet(PDF) 1 Page - Comchip Technology |
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MMBT2222ALT1 Datasheet(HTML) 1 Page - Comchip Technology |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 6 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO 30 40 Vdc Collector −Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO 60 75 Vdc Emitter −Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO 5.0 6.0 Vdc Collector Current − Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SOT−23 CASE 318 STYLE 6 Preferred devices are recommended choices for future use and best overall value. MARKING DIAGRAM xxx = 1P or M1B M = Date Code* G = Pb−Free Package COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 1 2 1 3 xxx M G G |
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