Features

n

Extremely Low Parasitic Capitance and Inductance

n

Surface Mountable in Microwave Circuits, No

Wirebonds Required

n

Rugged HMIC Construction with Polyimide Scratch

Protection

n

Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300

°C, 16 hours)

n

Lower Susceptibility to ESD Damage

Description

The MA4E2532-1113 Series SurMount

Barrier, Silicon Schottky Ring Quad Diodes are fabricated with

the

patented

Heterolithic

Microwave

Integrated

Circuit

(HMIC) process. HMIC circuits consist of Silicon pedestals

which form diodes or via conductors embedded in a glass

dielectric, which acts as the low dispersion, low loss,

microstrip transmission medium. The combination of silicon

and glass allows HMIC devices to have excellent loss and

power dissipation characteristics in a low profile, reliable

device.

The Surmount Schottky devices are excellent choices for

circuits requiring the small parasitics of a beam lead device

coupled with the superior mechanical performance of a chip.

The SurMount structure employs very low resistance silicon

vias to connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip. These

devices are reliable, repeatable, and a lower cost performance

solution

to

conventional

devices.

They

have

lower

susceptibility to electrostatic discharge than conventional beam

lead Schottky diodes.

The multi-layer metalization employed in the fabrication of the

Surmount Schottky junctions includes a platinum diffusion

barrier, which permits all devices to be subjected to a 16-hour

non-operating stabilization bake at 300

°C.

The “ 0505 ” outline allows for Surface Mount placement and

multi-functional polarity orientations.

Applications

The MA4E2532 1113 Series SurMount

Barrier, Silicon Schottky Ring Quad Diodes are recommended

for use in microwave circuits through Ku band frequencies for

lower power applications such as mixers, sub-harmonic mixers,

detectors and limiters. The HMIC construction facilitates the

direct replacement of more fragile beam lead diodes with the

corresponding Surmount diode, which can be connected to a

hard or soft substrate circuit with solder.

V 2.00

Case Style 1113

1

Dim

Inches

Millimeters

Min.

Max.

Min.

Max.

A

0.0445

0.0465

1.130

1.180

B

0.0445

0.0465

1.130

1.180

C

0.0040

0.0080

0.102

0.203

D Sq.

0.0128

0.325

E

0.0128

0.0148

0.325

0.375

0.0148

0.375

A

C

B

E

D

D

MA4E2532L-1113

MA4E2532M-1113

Equivalent Circuit

Silicon Schottky Diodes: Ring Quad Series