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MA4E2532M-1113W Datasheet(PDF) 1 Page - Tyco Electronics |
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MA4E2532M-1113W Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 4 page Features n Extremely Low Parasitic Capitance and Inductance n Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility to ESD Damage Description The MA4E2532-1113 Series SurMount TM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300 °C. The “ 0505 ” outline allows for Surface Mount placement and multi-functional polarity orientations. Applications The MA4E2532 1113 Series SurMount TM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. V 2.00 Case Style 1113 1 Dim Inches Millimeters Min. Max. Min. Max. A 0.0445 0.0465 1.130 1.180 B 0.0445 0.0465 1.130 1.180 C 0.0040 0.0080 0.102 0.203 D Sq. 0.0128 0.325 E 0.0128 0.0148 0.325 0.375 0.0148 0.375 A C B E D D MA4E2532L-1113 MA4E2532M-1113 Equivalent Circuit SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
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