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HAT3021R Datasheet(PDF) 8 Page - Renesas Technology Corp |
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HAT3021R Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 11 page HAT3021R Rev.2.00, Oct.06.2004, page 8 of 10 0 –0.03 –0.1 –0.3 –1 –3 –10 5 10 1 2 0.2 0.5 0.1 0.02 0.05 0.01 Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 25 °C Tc = –25 °C 75 °C Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature 500 400 300 200 100 -25 0 25 50 75 100 125 150 0 –0.5 A, –1 A, –2 A VGS = 4.5 V 10 V Pulse Test –2 A –0.1 –0.3 –1 –3 –10 100 20 50 10 0 –10 –20 –40 –50 –30 2000 5000 10000 1000 100 200 500 0 –20 –40 –60 –80 –100 0 0 –4 –8 –12 –16 –20 4 8 12 16 20 20 50 10 2 1 5 –0.1 –1 –10 20 50 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = –2.6 A VDS VGS tr td(on) td(off) Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nC) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics tf VGS = –10 V, VDS = –30 V Rg = 4.7 Ω, duty ≤ 1 % 100 di / dt = –100 A / µs VGS = 0, Ta = 25°C VDD = –50 V –25 V –10 V ID = –0.5 A, –1 A VDD = –50 V –25 V –10 V |
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