HAT3021R datasheet(8/11 Pages) RENESAS

Part #	HAT3021R

Description	Silicon N/P Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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8 / 11 page

HAT3021R

Rev.2.00, Oct.06.2004, page 8 of 10

0

–0.03 –0.1 –0.3

–1

–3

–10

5

10

1

2

0.2

0.5

0.1

0.02

0.05

0.01

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V

Pulse Test

25

°C

Tc = –25

°C

75

°C

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

500

400

300

200

100

-25

0

25

50

75

100 125 150

0

–0.5 A, –1 A, –2 A

VGS = 4.5 V

10 V

Pulse Test

–2 A

–0.1

–0.3

–1

–3

–10

100

20

50

10

0

–10

–20

–40

–50

–30

2000

5000

10000

1000

100

200

500

0

–20

–40

–60

–80

–100

0

–4

–8

–12

–16

–20

4

8

12

16

20

50

10

2

1

5

–0.1

–1

–10

20

50

10

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = –2.6 A

VDS

VGS

tr

td(on)

td(off)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nC)

Dynamic Input Characteristics

Drain Current

ID (A)

Switching Characteristics

tf

VGS = –10 V, VDS = –30 V

Rg = 4.7

Ω, duty ≤ 1 %

100

di / dt = –100 A /

µs

VGS = 0, Ta = 25°C

VDD = –50 V

–25 V

–10 V

ID = –0.5 A, –1 A

VDD = –50 V

–25 V

–10 V

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HAT3021R Datasheet(PDF) 8 Page - Renesas Technology Corp

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