GaAs Flip-Chip PIN Diodes

MA4GP907

V5.00

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or information contained herein without notice.

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2

Parameters and Test Conditions

Symbol

Units

1 MHz & DC

Specifications

Min.

Typ.

Max.

Min.

Typ.

Max.

Total Capacitance at -10 V

Ct

pF

0.025

0.030

0.025

Forward Resistance at +10mA

Rs

Ohms

4.2

Forward Voltage at +10mA

Vf

Volts

1.33

1.45

Reverse Breakdown Voltage at -10uA

3

Vb

Volts

-50

-45

Switching Speed (10 to 90% RF Voltage)

4

& (90 to 10% RF Voltage)

4

Trise

Tfall

nS

2

10 GHz Reference

Data

1,2

1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.

2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line

at 10 GHz.

3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.

4. Switching speed is measured between 10% and 90% or 90% to 10% RF Voltage for a Single Series Mounted Diode.

Driver delay is Not included.

Notes:

Single Series Diode Insertion Loss vs Frequency

-0.8

-0.6

-0.4

-0.2

0.0

2

4

6

8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40

Frequency (GHz)

I. Loss @5mA

I. Loss @15mA

I. Loss @50mA