Designed for Automated Assembly

These SMQ PIN diodes are designed for high volume tape

and reel assembly. The rectangular package design provides

for highly efficient automatic pick and place assembly

techniques. The parallel flat surfaces are suitable for key

jaw or vacuum pickup techniques. All solder able surfaces

are tin plated and compatible with reflow and vapor phase

soldering methods.

Enviornmental Capability

HIPAX devices are applicable for use in industrial and

military applications and can be screened to meet the

environmental requirements of MIL-STD-750, MIL-STD-202 as

well as other military standards. The table below lists some

of the MIL-STD 750 tests the device is designed to meet.

Non Magnetic SMQ HIPAX

PIN Diode

V 2.00

Features

n

Non-Magnetic Package Suitable for MRI Applications

n

Rectangular MELF SMQ Ceramic Package

n

Hermetically Sealed

n

Lower Rs for Lower Series Loss

n

Longer

τ

n

Lower Cj for Higher Series Isolation

n

Higher Average Incident Power Handling Capability

Description

The MA4P7461F-1072T is a surface mountable PIN diode

in a Non-Magnetic ( patent pending ) Metal Electrode

Leadless Faced (MELF) package. The device incorporates

M/A-COM’s proven HIPAX technology to produce a low

inductance ceramic package with no ribbons or whisker

wires. The package utilizes M/A-COM’s new non-

magnetic plating process to provide an extremely low

permeability, hermetically sealed package. Incorporated in

the package is a passivated PIN diode that is full face

bonded on both the cathode and anode of the chip to

maximize surface area for lower electrical and thermal

resistance.

The

MA4P7461F-1072T

has

been

comprehensively

characterized

both

electrically

and

mechanically

to

ensure

repeatable

and

predictable

performance.

Applications

The diodes are well suited for use in low loss, low

distortion, and high power switching circuits applicable for

high magnetic field environments from HF through UHF

frequencies. The lower thermal resistance of this device

provides excellent higher average performance at RF power

incident levels up to 100 watts CW. This device is designed

to meet the most rigorous electrical and mechanical

requirements of MRI testing environments.

Test

Method

Description

High Temperature Storage

1031

+150 °C, 340 Hours

Temperature Shock

1051

-65 °C to +125 °C, 20 Cycles

HTRB

1038

Moisture Resistance

1021

No Initial Conditioning, 85 % RH, +85° C

Gross Leak

1071 Cond. E

Dye Penetrant Visual

Vibration Fatigue

2046

20,000 G’s, 60 Hz, x, y, z axis

Solderability

2026

Test Temperature = +245 °C

MIL-STD-750