Silicon PIN Limiter Diodes

MA4L Series

V 5.0

Specification Subject to Change Without Notice

M/A-COM Inc.

þ

43 South Avenue, Burlington, MA 01803 USA

þ

Telephone: 781-564-3100

3

Notes for Specifications and Nominal High Signal Performance Table:

to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)

2. Nominal C.W. Thermal Resistance -

a metal ( infinite ) heatsink. Diode only thermal resistance values are approximately 2 ºC/W lower in

value than the ODS-30 listed package values.

3. Maximum High Signal Performance – Measured using a single shunt diode ( die ) attached

directly to the gold plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω,

SMA, connectorized test fixture. Chip anode contact is thermo sonically wire bonded using a

1 mil dia. gold wire onto a 7.2 mil thick Rogers 5880 duroid microstrip trace. A shunt coil

provides the D.C. return. Test Frequency = 9.4 GHz, RF pulse width = 1.0 µS, 0.001 duty cycle.

4. Maximum C.W Incident Power - Measured in a 50 Ω, SMA, connectorized housing @ 4GHz utilizing a

TWT amplifier and the same single diode assembly configuration as stated in Note 3 above.

Die Handling and Mounting Information

Handling:

All semiconductor chips should be handled with care in order to avoid damage or contamination

from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick

up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are

minimized.

Die Attach:

The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0 µm. Die can be

mounted with a gold-tin, eutectic solder preform or conductive silver epoxy. The metal RF and D.C. ground

plane mounting surface must be free of contamination and should have a surface flatness of < +/- 0.002“.

Eutectic Die Attachment Using Hot Gas Die Bounder

: An 80/20, gold-tin eutectic solder preform is

Eutectic Die Attachment Using Reflow Oven

: See Application Note M541, “Bonding and Handling

Procedures for Chip Diode Devices” at www.macom.com. for recommended profile.

Epoxy Die Attachment:

A thin, controlled amount of electrically conductive silver epoxy should be applied

at approximately a 1–2 mils thickness to minimize ohmic and thermal resistances. A thin epoxy fillet should

be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive

epoxy per manufacturer’s schedule.

Die Bonding:

The anode bond pads on these die have a Ti-Pt-Au metallization scheme, with a final gold

thickness of 1.0 µm. Thermosonic wedge wire bonding of 0.001” diameter gold wire is recommended with a

minimum required. Automatic ball bonding can also be used.

See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices”

for more detailed handling and assembly instructions at www.macom.com.