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MAAMGM0002 Datasheet(PDF) 1 Page - Tyco Electronics |
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MAAMGM0002 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 6 page Amplifier, Distributed, 0.1W 1.0-18.0 GHz MAAMGM0002-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Rev E 1 RoHS Compliant Primary Applications ♦ Test Equipment ♦ Electronic Warfare ♦ Radar Features ♦ 0.1 Watt Saturated Output Power Level ♦ 4 dB Typical Noise Figure ♦ Select-at-Test Biasing ♦ MSAG™ Process Description The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self- Aligned Gate Process. M/A-COM’s MSAG™ process features robust silicon-like manufac- turing processes, planar processing of ion implanted transistors, mul- tiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Also Available in: SAMPLES Description Ceramic Package Sample Board (Die) Sample Board (Packaged) Part Number MAAMGM0002 MAAMGM0002-DIE-SMB MAAMGM0002-SMB Electrical Characteristics: TB = 40°C 1, Z 0 = 50Ω, VDD = 5V, IDQ = 75 mA 2, P in = 13 dBm 1. TB = MMIC Base Temperature 2. Adjust VGG between –1.0 and –0.3 V to achieve IDQ indicated. Parameter Symbol Typical Units Bandwidth f GHz Output Power POUT 21 dBm Power Added Efficiency PAE 12 % 1-dB Compression Point P1dB 20 dBm Small Signal Gain G 9 dB Input VSWR f = 2 GHz VSWR 1.7:1 Gate Current IGG < 2 mA Drain Current IDD 100 mA Output TOI OTOI 31 dBm Output VSWR f = 2 GHz VSWR 1.7:1 Noise Figure NF 4 dB Minimum 1.0 19.5 7 Maximum 18.0 2:1 2:1 150 |
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