Amplifier, Distributed, 0.1W

1.0-18.0 GHz

MAAMGM0002-DIE

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

Rev E

1

RoHS

Compliant

Primary Applications

Features

Description

bias networks. This product is fully matched to 50 ohms on both the

input and output. The MMIC can be used as a broadband amplifier

stage or as a driver stage in high power applications.

Each device is 100% RF tested to ensure performance compliance.

The part is fabricated using M/A-COM’s GaAs Multifunction Self-

Aligned Gate Process.

M/A-COM’s MSAG™ process features robust silicon-like manufac-

turing processes, planar processing of ion implanted transistors, mul-

tiple implant capability enabling power, low-noise, switch and digital

FETs on a single chip, and polyimide scratch protection for ease of

use with automated manufacturing processes. The use of refractory

metals and the absence of platinum in the gate metal formulation

prevents hydrogen poisoning when employed in hermetic packaging.

Also Available in:

SAMPLES

Description

Ceramic Package

Sample Board (Die)

Sample Board (Packaged)

Part Number

MAAMGM0002

MAAMGM0002-DIE-SMB

MAAMGM0002-SMB

1.

2.

Parameter

Symbol

Typical

Units

Bandwidth

f

GHz

Output Power

21

dBm

Power Added Efficiency

PAE

12

%

1-dB Compression Point

P1dB

20

dBm

Small Signal Gain

G

9

dB

Input VSWR

f = 2 GHz

VSWR

1.7:1

Gate Current

< 2

mA

Drain Current

100

mA

Output TOI

OTOI

31

dBm

Output VSWR

f = 2 GHz

VSWR

1.7:1

Noise Figure

NF

4

dB

Minimum

1.0

19.5

7

Maximum

18.0

2:1

2:1

150