PHX8N50E datasheet(1/8 Pages) PHILIPS

Part #	PHX8N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistors

PHX8N50E

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

DSS = 500 V

• Stable off-state characteristics

• High thermal cycling performance

I

D = 4.2 A

• Isolated package

R

DS(ON) ≤ 0.85 Ω

GENERAL DESCRIPTION

PINNING

SOT186A

N-channel,

enhancement

mode

DESCRIPTION

field-effect

power

transistor,

intended for use in off-line switched

1

gate

mode power supplies, T.V. and

computer monitor power supplies,

2

drain

d.c. to d.c. converters, motor control

circuits

and

general

purpose

3

source

switching applications.

case

isolated

The PHX8N50E is supplied in the

SOT186A

full

pack,

isolated

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

500

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

500

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

hs =

25 ˚C; V

GS = 10 V

-

4.2

A

T

hs = 100 ˚C; VGS = 10 V

-

2.7

A

I

DM

Pulsed drain current

T

hs = 25 ˚C

-

34

A

P

D

Total dissipation

T

hs = 25 ˚C

-

37

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

AS = 7.4 A;

-

531

mJ

energy

t

p = 0.22 ms; Tj prior to avalanche = 25˚C;

V

DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer

to fig:17

E

AR

Repetitive avalanche energy

1

I

AR = 8.5 A; tp = 2.5 µs; Tj prior to

-

13

mJ

avalanche = 25˚C; R

GS = 50 Ω; VGS = 10 V;

refer to fig:18

I

AS, IAR

Repetitive and non-repetitive

-

8.5

A

avalanche current

d

g

s

12 3

case

1 pulse width and repetition rate limited by T

j max.

December 1998

1

Rev 1.300

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