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MAAP-000076-PKG001 Datasheet(PDF) 1 Page - Tyco Electronics |
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MAAP-000076-PKG001 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 8 page Amplifier, Power, 16W 1.3-2.5 GHz M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.comfor additional data sheets and product information. Rev — Preliminary Datasheet 1 MAAP-000076-PED000 1. TB = MMIC Base Temperature 2. Adjust VGG between –2.6 and –1.5V to achieve specified Idq. Parameter Symbol Typical Units Bandwidth f 1.3-2.5 GHz Output Power POUT 42 dBm 1-dB Compression Point P1dB 41 dBm Small Signal Gain G 25 dB Input VSWR VSWR 1.3:1 Gate Current IGG 33 mA Drain Current IDD 5.2 A Output VSWR VSWR 1.6:1 2nd Harmonic 2f 25 dBc Power Added Efficiency PAE 29 % Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage (6-10V) Operation ♦ MSAG™ Process Description The MAAPGM0076-PED000 is a 2-stage 16 W power amplifier with on-chip bias net- works eutectically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch pro- tection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: TB = 45°C 1, Z 0 = 50 Ω, VDD = 10V, IDQ = 3.8A 2, P in = 24 dBm, RG = 30Ω Primary Applications ♦ Radio Communications ♦ SatCom Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000076-PKG001 MAAP-000076-SMB004 MAAP-000076-SMB001 MAAP-000076-MCH000 |
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