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BPV23NF Datasheet(PDF) 2 Page - Vishay Siliconix |
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BPV23NF Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  www.vishay.com 2 Document Number 81513 Rev. 1.6, 13-Nov-06 BPV23NF(L) Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward Voltage IF = 50 mA VF 11.3 V Breakdown Voltage IR = 100 μA, E = 0 V(BR) 60 V Reverse Dark Current VR = 10 V, E = 0 Iro 230 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 48 pF Serial Resistance VR = 12 V, f = 1 MHz RS 900 Ω Parameter Test condition Symbol Min Typ. Max Unit Open Circuit Voltage Ee = 1 mW/cm 2, λ = 950 nm Vo 390 mV Temp. Coefficient of Vo Ee = 1 mW/cm 2, λ = 950 nm TKVo - 2.6 mV/K Short Circuit Current Ee = 1 mW/cm 2, λ = 950 nm Ik 65 μA Reverse Light Current Ee = 1 mW/cm 2, λ = 870 nm, VR = 5 V Ira 45 65 μA Temp. Coefficient of Ira Ee = 1 mW/cm 2, λ = 950 nm, VR = 10 V TKIra 0.1 %/K Absolute Spectral Sensitivity VR = 5 V, λ = 870 nm s( λ) 0.57 A/W VR = 5 V, λ = 950 nm s( λ) 0.60 A/W Angle of Half Sensitivity ϕ ± 60 deg Wavelength of Peak Sensitivity λ p 940 nm Range of Spectral Bandwidth λ 0.5 790 to 1050 nm Quantum Efficiency λ = 950 nm η 90 % Noise Equivalent Power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/ √ Hz Detectivity VR = 10 V, λ = 950 nm D* 5 x 1012 cm √Hz/W Rise Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 70 ns Fall Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 70 ns Cut-Off Frequency VR = 12 V, RL = 1 kΩ, λ = 870 nm fc 4MHz VR = 12 V, RL = 1 kΩ, λ = 950 nm fc 1MHz |
Similar Part No. - BPV23NF_06 |
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Similar Description - BPV23NF_06 |
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