Philips Semiconductors

Product specification

N-channel TrenchMOS

 transistor

PHX9NQ20T , PHF9NQ20T

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Low on-state resistance

V

• Fast switching

• Low thermal resistance

I

R

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line

switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits

and general purpose switching applications.

The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package

PINNING

SOT186A (FPAK)

SOT186 (FPAK)

PIN

DESCRIPTION

1

gate

2

drain

3

source

case

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

-

200

V

V

DGR

Drain-gate voltage

T

-

200

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

25 ˚C; V

-

5.2

A

T

-

3.3

A

I

DM

Pulsed drain current

T

-

21

A

P

D

Total power dissipation

T

-

25

W

T

Operating junction and

- 55

150

˚C

storage temperature

d

g

s

12 3

case

12 3

case

November 2000

1

Rev 1.100