Specifications and information are subject to change without notice

WJ Communications, Inc

Phone 1-800-WJ1-4401 FAX: 408-577-6621

e-mail: sales@wj.com

Web site: www.wj.com

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April 2006

AH115

½ Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

SOIC-8 SMT Pkg.

Applications

Product Description

The AH115 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance for various narrow-band

tuned application circuits with up to +44 dBm OIP3 and

+28.5 dBm of compressed 1-dB power. All devices are

100% RF and DC tested. The AH115 is available in lead-

free/green/RoHS-compliant SOIC-8 package.

The product is targeted for use as driver amplifiers for

wireless infrastructure where high linearity and medium

power is required. The internal active bias allows the

AH115 to maintain high linearity over temperature and

operate directly off a +5 V supply. This combination

makes the device an excellent fit for transceiver line

cards and power amplifiers in current and next generation

multi-carrier 3G base stations.

Functional Diagram

Function

Pin No.

Vref

1

Input

3

Output

6, 7

Vbias

8

GND

Backside Paddle

N/C or GND

2, 4, 5

Parameters

Units Min

Typ

Max

Operational Bandwidth

MHz

1800

2300

Test Frequency

MHz

2140

Gain

dB

12.5

14.4

Input Return Loss

dB

23

Output Return Loss

dB

8

Output P1dB

dBm

+26.5

+28.5

dBm

+41

+42

IS-95A Channel Power

@ -45 dBc ACPR, 1960 MHz

dBm

+22.5

wCDMA Channel Power

@ -45 dBc ACLR, 2140 MHz

dBm

+20

Noise Figure

dB

5.3

mA

200

250

300

Device Voltage

V

+5

1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions. It is

expected that the current can increase up to 300mA at P1dB.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

qC

Storage Temperature

-65 to +150

qC

RF Input Power (continuous)

+22 dBm

Device Voltage

+8 V

Device Current

400 mA

Device Power

2 W

Junction Temperature

+250

qC

Operation of this device above any of these parameters may cause permanent damage.

Parameters

Units

Typical

Frequency

MHz

1960

2140

Gain

dB

14.3

14.4

S11

dB

-12

-23

S22

dB

-8

-8

Output P1dB

dBm

+28.3

+28.5

dBm

+44

+42

IS-95A Channel Power

@ -45 dBc ACPR,

dBm

+22.5

wCDMA Channel Power

@ -45 dBc ACLR

dBm

+20

Noise Figure

dB

5

5.3

Supply Bias

+5 V @ 250 mA

4. Typical parameters reflect performance in a tuned application circuit at +25 C.

Ordering Information

Part No.

Description

AH115-S8G

½ Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

AH115-S8PCB1960

1960 MHz Evaluation Board

AH115-S8PCB2140

2140 MHz Evaluation Board

1

2

3

4

8

7

6

5