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AH215-S8PCB2140 Datasheet(PDF) 1 Page - WJ Communication. Inc. |
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AH215-S8PCB2140 Datasheet(HTML) 1 Page - WJ Communication. Inc. |
1 / 7 page Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 7 September 2005 AH215 1 Watt, High Linearity InGaP HBT Amplifier Product Information The Communications Edge TM Product Features • 400 – 2300 MHz • +31.5 dBm P1dB • +46 dBm Output IP3 • 18 dB Gain @ 900 MHz • +5V Single Positive Supply • MTTF > 100 Years • Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg. Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure Product Description The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH215 to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram Function Pin No. Vref 1 Input 3 Output 6, 7 Vbias 8 GND Backside Paddle N/C or GND 2, 4, 5 Specifications (1) Parameters Units Min Typ Max Operational Bandwidth MHz 400 2300 Test Frequency MHz 2140 Gain dB 10 11 Input Return Loss dB 18 Output Return Loss dB 8 Output P1dB dBm +29 +31.5 Output IP3 (2) dBm +43.8 +45 Noise Figure dB 6.3 IS-95 Channel Power @ -45 dBc ACPR, 1960MHz dBm +25.5 wCDMA Channel Power @ -45 dBc ACPR, 2140 MHz dBm +23 Operating Current Range , Icc (3) mA 400 450 500 Device Voltage, Vcc V 5 1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -65 to +150 °C RF Input Power (continuous) +26 dBm Device Voltage +8 V Device Current 900 mA Device Power 5 W Junction Temperature +250 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (4) Parameters Units Typical Frequency MHz 900 1960 2140 Gain dB 18 12 11 S11 dB -13 -11 -18 S22 dB -7 -10 -8 Output P1dB dBm +31 +32 +31.5 Output IP3 dBm +46 +46 +45 IS-95A Channel Power @ -45 dBc ACPR dBm +25.5 +25.5 wCDMA Channel Power @ -45 dBc ACPR dBm +23 Noise Figure dB 7.0 5.5 6.2 Supply Bias +5 V @ 450 mA 4. Typical parameters reflect performance in a tuned application circuit at +25 °C. Ordering Information Part No. Description AH215-S8G 1 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Pkg) AH215-S8PCB900 900 MHz Evaluation Board AH215-S8PCB1960 1960 MHz Evaluation Board AH215-S8PCB2140 2140 MHz Evaluation Board 1 2 3 4 8 7 6 5 |
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