Specifications and information are subject to change without notice.

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 7 September 2005

AH215

1 Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

Product Features

SOIC-8 SMT Pkg.

Applications

Product Description

The AH215 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able

to

achieve

superior

performance

for

various

narrowband-tuned application circuits with up to +46 dBm

OIP3 and +31.5 dBm of compressed 1-dB power. The part

is housed in a lead-free/green/RoHS-compliant SOIC-8

package. All devices are 100% RF and DC tested.

The product is targeted for use as driver amplifier for

various current and next generation wireless technologies

such as GPRS, GSM, CDMA, W-CDMA, and UMTS,

where high linearity and high power is required.

The

internal active bias allows the AH215 to maintain high

linearity over temperature and operate directly off a +5 V

supply.

Functional Diagram

Function

Pin No.

Vref

1

Input

3

Output

6, 7

Vbias

8

GND

Backside Paddle

N/C or GND

2, 4, 5

Specifications

(1)

Parameters

Units Min

Typ

Max

Operational Bandwidth

MHz

400

2300

Test Frequency

MHz

2140

Gain

dB

10

11

Input Return Loss

dB

18

Output Return Loss

dB

8

Output P1dB

dBm

+29

+31.5

Output IP3

(2)

dBm

+43.8

+45

Noise Figure

dB

6.3

IS-95 Channel Power

@ -45 dBc ACPR, 1960MHz

dBm

+25.5

wCDMA Channel Power

@ -45 dBc ACPR, 2140 MHz

dBm

+23

Operating Current Range , Icc

(3)

mA

400

450

500

Device Voltage, Vcc

V

5

1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into

pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1

is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull

10.8 mA of current when used with a series bias resistor of R1=51

Ω. (ie. total device current

typically will be 461 mA.)

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-65 to +150

°C

RF Input Power (continuous)

+26 dBm

Device Voltage

+8 V

Device Current

900 mA

Device Power

5 W

Junction Temperature

+250

°C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(4)

Parameters

Units

Typical

Frequency

MHz

900

1960

2140

Gain

dB

18

12

11

S11

dB

-13

-11

-18

S22

dB

-7

-10

-8

Output P1dB

dBm

+31

+32

+31.5

Output IP3

dBm

+46

+46

+45

IS-95A Channel Power

@ -45 dBc ACPR

dBm

+25.5

+25.5

wCDMA Channel Power

@ -45 dBc ACPR

dBm

+23

Noise Figure

dB

7.0

5.5

6.2

Supply Bias

+5 V @ 450 mA

4. Typical parameters reflect performance in a tuned application circuit at +25

°C.

Ordering Information

Part No.

Description

AH215-S8G

1 Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

AH215-S8PCB900

900 MHz Evaluation Board

AH215-S8PCB1960

1960 MHz Evaluation Board

AH215-S8PCB2140

2140 MHz Evaluation Board

1

2

3

4

8

7

6

5