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PMBF5484 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMBF5484 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 10 page April 1995 2 Philips Semiconductors Product specification N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 FEATURES • Low noise • Interchangeability of drain and source connections • High gain. DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 MARKING CODES: PIN DESCRIPTION 1 source 2 drain 3 gate PMBF5484: p6B PMBF5485: p6M PMBF5486: p6H QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 25 V IDSS drain current VDS = 15 V; VGS = 0 PMBF5484 1 5 mA PMBF5485 4 10 mA PMBF5486 8 20 mA Ptot total power dissipation up to Tamb = 25 °C − 250 mW VGS(off) gate-source cut-off voltage VDS = 15 V; ID = 1 nA PMBF5484 −0.3 −3V PMBF5485 −0.5 −4V PMBF5486 −2 −6V Y fs common source transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz PMBF5484 3 6 mS PMBF5485 3.5 7 mS PMBF5486 4 8 mS Fig.1 Simplified outline and symbol. handbook, halfpage 12 g d s 3 Top view MAM385 |
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