NE662M04-T2-A datasheet(1/11 Pages) CEL

Part #	NE662M04-T2-A

Description	NPN SILICON HIGH FREQUENCY TRANSISTOR

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Manufacturer	CEL [California Eastern Labs]

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NPN SILICON RF TRANSISTOR

NE662M04

NPN SILICON HIGH

FREQUENCY TRANSISTOR

M04

•

HIGH GAIN BANDWIDTH: fT = 25 GHz

•

LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz

•

HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz

•

NEW LOW PROFILE M04 PACKAGE:

• SOT-343 footprint, with a height of just 0.59 mm

• Flat Lead Style for better RF performance

FEATURES

DESCRIPTION

NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the

NE662M04 is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low current

performance.

NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE662M04 is an ideal choice

for LNA and oscillator requirements in all mobile communication systems.

PART NUMBER

NE662M04

EIAJ1 REGISTERED NUMBER

2SC5508

PACKAGE OUTLINE

M04

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

Collector Cutoff Current at VCB = 5V, IE = 0

nA

200

IEBO

Emitter Cutoff Current at VEB = 1 V, IC = 0

nA

200

hFE

Forward Current Gain2 at VCE = 2 V, IC = 5 mA

50

70

100

fT

Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz

GHz

20

25

MAG

Maximum Available Power Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz

dB

20

MSG

Maximum Stable Gain5 at VCE = 2 V, IC = 20 mA, f = 2 GHz

dB

20

|S21E|2

Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz

dB

14

17

NF

Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT

dB

1.1

1.5

P1dB

Output Power at 1 dB compression point at

VCE = 2 V, IC = 20 mA, f = 2 GHz

dBm

11

IP3

Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz

22

Cre

Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz

pF

0.18

0.24

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.

4. MAG =

5. MSG = S

21

S12

S21

S12 (

K-

)

(K

2 -1)

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 22, 2005

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