NE68639-T1 datasheet(1/12 Pages) CEL

Part #	NE68639-T1

Description	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

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Manufacturer	CEL [California Eastern Labs]

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The

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NE68630

NE68633

NE68639

NE68639R

SURFACE MOUNT NPN SILICON

HIGH FREQUENCY TRANSISTOR

NE686

SERIES

30 (SOT 323 STYLE)

39 (SOT 143 STYLE)

33 (SOT 23 STYLE)

19 (3 PIN ULTRA SUPER

MINI MOLD)

39R (SOT 143R STYLE)

18 (SOT 343 STYLE)

Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.

2. Electronic Industrial Association of Japan.

3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.

4. The emitter terminal should be connected to the ground terminal of

the 3 terminal capacitance bridge.

California Eastern Laboratories

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz

• LOW VOLTAGE/LOW CURRENT OPERATION

• HIGH INSERTION POWER GAIN:

|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz

|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz

• LOW NOISE: 1.5 dB AT 2.0 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES

DESCRIPTION

NEC's NE686 series of NPN epitaxial silicon transistors are

designed for low voltage/low current, amplifier and oscillator

applications. NE686's high fT make it an excellent choice for

portable wireless applications up to 5 GHz. The NE686 die is

available in six different low cost plastic surface mount pack-

age styles.

PART NUMBER1

NE68618

NE68619

NE68630

NE68633

NE68639/39R

EIAJ2 REGISTERED NUMBER

2SC5180

2SC5181

2SC5179

2SC5177

2SC5178/78R

PACKAGE OUTLINE

18

19

30

33

39/39R

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

fT

Gain Bandwidth Product at

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

GHz

12 15.5

10

13

7.5

9

10

13

10.5 13.5

fT

Gain Bandwidth Product at

VCE = 1 V, IC = 5 mA, f = 2.0 GHz

GHz

10

13

8.5

12

7

8.5

12

8.5

12

NFMIN

Minimum Noise Figure at

VCE = 2 V, IC = 3 mA, f = 2.0 GHz

dB

1.5

2.0

1.5

2.0

1.5

2.0

1.5

2.0

1.5

2.0

NFMIN

Minimum Noise Figure at

VCE = 1 V, IC = 3 mA, f = 2.0 GHz

dB

1.5

2.0

1.5

2.0

1.5

2.0

1.5

2.0

1.5

2.0

|S21e|2

Insertion Power Gain at

VCE = 2V, IC =7 mA, f = 2.0 GHz

dB

10

12

8

10.5

7.5

9

7.5

9

9.5 11.5

|S21e|2

Insertion Power Gain at

VCE = 1V, IC =5 mA, f = 2.0 GHz

dB

8.5 11

7

9

7

8.5

7

8.5

7.5 10.5

hFE

Forward Current Gain3 at

VCE = 2 V, IC = 7 mA

70

140

70

140

70

140

70

140

70

140

ICBO

Collector Cutoff Current

at VCB = 5 V, IE = 0 mA

nA

100

IEBO

Emitter Cutoff Current

at VEB = 1 V, IC = 0 mA

nA

100

CRE4

Feedback Capacitance at

VCB = 2 V, IE = 0 mA, f = 1 MHz

pF

0.3

0.5

0.4

0.6

0.4

0.6

0.5

0.6

0.3

0.5

PT

Total Power Dissipation

mW

30

RTH(J-A)

Thermal Resistance

(Junction to Ambient)

°C/W

833

1250

833

625

RTH(J-C)

Thermal Resistance(Junction to Case) °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C)

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NE68639-T1 Datasheet(PDF) 1 Page - California Eastern Labs

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