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NE68833-T1-A Datasheet(PDF) 1 Page - California Eastern Labs |
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NE68833-T1-A Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 20 page SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES • ALSO AVAILABLE IN CHIP FORM 39 (SOT 143 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 39R (SOT 143R STYLE) DESCRIPTION 18 (SOT 343 STYLE) PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers The following part numbers The following part numbers The following part numbers The following part numbers from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not recommended for new design. recommended for new design. recommended for new design. recommended for new design. recommended for new design. Please call sales office for Please call sales office for Please call sales office for Please call sales office for Please call sales office for details: details: details: details: details: NE68818 NE68818 NE68818 NE68818 NE68818 NE68839 NE68839 NE68839 NE68839 NE68839 NE68839R NE68839R NE68839R NE68839R NE68839R NEC's NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent linearity. NE688's low phase noise distortion and high fT make it an excellent choice for oscillator applications up to 5 GHz. The NE688 series is available in six different low cost plastic surface mount pack- age styles, and in chip form. PART NUMBER1 NE68818 NE68819 NE68830 NE68833 NE68839/39R EIAJ2 REGISTERED NUMBER 2SC5194 2SC5195 2SC5193 2SC5191 2SC5192/92R PACKAGE OUTLINE 18 19 30 33 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 1V, IC = 3 mA, f = 2.0 GHz GHz 4 5 4.5 5 4 4.5 4 4.5 4 4.5 fT Gain Bandwidth Product at VCE = 3V, IC = 20 mA, f = 2.0 GHz GHz 10 9.5 9 8.5 9 NFMIN Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 NFMIN Minimum Noise Figure at VCE = 3 V, IC = 7 mA, f = 2.0 GHz dB 1.5 1.5 1.5 1.5 1.5 |S21E|2 Insertion Power Gain at VCE = 1V, IC = 3 mA, f = 2.0 GHz dB 3.0 4.0 3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5 |S21E|2 Insertion Power Gain at VCE = 3V, IC = 20 mA, f = 2.0 GHz dB 8.5 8 6.5 6.5 9 hFE Forward Current Gain3 at VCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100 CRE4 Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8 PT Total Power Dissipation mW 150 125 150 200 200 RTH(J-A) Thermal Resistance (Junction to Ambient) °C/W 833 1000 833 625 625 RTH(J-C) Thermal Resistance(Junction to Case) °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C) 3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) California Eastern Laboratories |
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