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PMBFJ308 Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMBFJ308 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1996 Sep 11 7 Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 Fig.9 Typical output characteristics; PMBFJ309. handbook, halfpage 0 4 8 12 16 20 0 16 MCD218 12 8 4 VDS (V) ID (mA) −1 V −0.75 V −0.5 V −0.25 V VGS = 0 V Tj =25 °C. Fig.10 Typical transfer characteristics; PMBFJ309. VDS = 10 V; Tj =25 °C. handbook, halfpage −2 −1.5 −1 −0.5 0 20 0 16 MCD215 12 8 4 VGS (V) ID (mA) Fig.11 Typical output characteristics; PMBFJ310. Tj =25 °C. handbook, halfpage 04 8 16 40 30 10 0 20 MCD217 12 ID (mA) VDS (V) −2.5 V −2 V −1.5 V −1 V VGS = 0 V −0.5 V Fig.12 Typical transfer characteristics; PMBFJ310. VDS = 10 V; Tj =25 °C. handbook, halfpage −4 −3 −20 40 30 10 0 20 MCD214 −1 ID (mA) VGS (V) |
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