NE856M02 datasheet(2/8 Pages) CEL

Part #	NE856M02

Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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NE856M02

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

V

20

VCEO

Collector to Emitter Voltage

V

12

VEBO

Emitter to Base Voltage

V

3.0

IC

Collector Current

mA

100

PT

Total Power Dissipation2

W

1.2

TJ

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

Notes:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic

substrate (copper plating).

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Ambient Temperature, TA (°C)

Collector to Base Voltage, VCB (V)

Collector Current, Ic (mA)

Collector Current, IC (mA)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

FEED BACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

INSERTION GAIN vs.

COLLECTOR CURRENT

DC CURRENT GAIN vs.

COLLECTOR CURRENT

2.0

1.0

0

50

100

150

Free Air

RTH (J-A) 312.5 °CW

Ceramic Substrate

16 cm x 0.7 mm

2

f = 1.0 MHz

5.0

3.0

2.0

1.0

0.5

0.8

13

5

10

20

30

VCE = 10 V

200

100

50

20

10

0.5

1

5

10

50

15

10

5

0

1

3

5

10

20 30

50

100

VCE = 10 V

f = 1 GHz

PART NUMBER

QUANTITY

PACKAGING

NE856M02-T1-AZ

1000

Tape & Reel

ORDERING INFORMATION

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