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MBM29LV160TM90PBT Datasheet(PDF) 2 Page - SPANSION |
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MBM29LV160TM90PBT Datasheet(HTML) 2 Page - SPANSION |
2 / 57 page MBM29LV160TM/BM90 2 (Continued) The MBM29LV160TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS stan- dard. Commands are written into the command register. The register contents serve as input to an internal state- machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29LV160TM/BM is programmed by executing the program command sequence. This will invoke the Embedded Program AlgorithmTM which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase AlgorithmTM which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. All sectors are erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices internally return to the read mode. Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The devices electrically erase all bits within a sector simulta- neously via hot-hole assisted erase. The bytes/words are programmed one bytes/words at a time using the EPROM programming mechanism of hot electron injection. |
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