MBM29PL32TM10TN datasheet(1/68 Pages) SPANSION

Part #	MBM29PL32TM10TN

Description	FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash

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DS05-20907-3E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

32 M (4M

×××× 8/2M ×××× 16) BIT

MirrorFlashTM*

MBM29PL32TM/BM 90/10

s DESCRIPTION

The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by

16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be

programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or

erase operations. The devices can also be reprogrammed in standard EPROM programmers.

(Continued)

s PRODUCT LINE UP

s PACKAGES

* : MirrorFlashTM is a trademark of Fujitsu Limited.

Notes :

• Programming in byte mode ( × 8) is prohibited.

• Programming to the address that already contains data is prohibited.

(It is mandatory to erase data prior to overprogram on the same address.)

Part No.

MBM29PL32TM/BM

90

10

VCC

3.0 V to 3.6 V

Max Address Access Time

90 ns

100 ns

Max CE Access Time

90 ns

100 ns

Max Page Read Access Time

25 ns

30 ns

48-pin plastic TSOP (1)

48-ball plastic FBGA

(FPT-48P-M19)

(BGA-48P-M20)

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