MBM29SL800BD-12PFTR datasheet(3/56 Pages) SPANSION

Part #	MBM29SL800BD-12PFTR

Description	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT

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MBM29SL800TD-10/12/MBM29SL800BD-10/12

3

s FEATURES

• Single 1.8 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (I) (Package suffix : TN

− Normal Bend Type, TR − Reversed Bend Type)

48-ball FBGA (Package suffix : PBT)

48-ball SCSP (Package suffix : PW)

• Minimum 100,000 program/erase cycles

• High performance

100 ns maximum access time

• Sector erase architecture

One 8 Kword, two 4 Kwords, one 16 Kword, and fifteen 32 Kwords sectors in word mode

One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and fifteen 64 Kbytes sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T

= Top sector

B

= Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

•Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Sector protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection set function by Extended sector Protect command

• Fast programming Function by Extended Command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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SPANSION	MBM29SL800BE-10PBT	451Kb / 52P	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
	MBM29SL800BE-10PW	451Kb / 52P	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
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Manufacturer	Part #	Datasheet	Description
SPANSION	MBM29SL800TE-90	451Kb / 52P	FLASH MEMORY CMOS 8 M (1 M X 8/512 K X 16) BIT
SPANSION	MBM29F004TC-70	474Kb / 53P	FLASH MEMORY CMOS 4 M (512 K X 8) BIT
Advanced Micro Devices	AM29LV800B	569Kb / 42P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
SPANSION	AM29LV800D	1Mb / 46P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices	AM29DL800B	580Kb / 43P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
	AM29LL800B	534Kb / 40P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory
	AM29F800B	518Kb / 39P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
	AM29DL800B	1Mb / 46P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
SPANSION	S29AL008J	1Mb / 54P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices	AM29LV800D	1Mb / 51P	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

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MBM29SL800BD-12PFTR Datasheet(PDF) 3 Page - SPANSION

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