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NE52118 Datasheet(PDF) 1 Page - NEC |
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NE52118 Datasheet(HTML) 1 Page - NEC |
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1 / 7 page  PART NUMBER NE52118 PACKAGE OUTLINE 18 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at VCE = 2 V, f = 2 Ghz, ZS = ZL = 50 Ω IC = 3 mA dB — 1.0 1.5 IC = 5 mA — 1.0 — Ga Associated Gain at VCE = 2 V, f = 2 Ghz, ZS = ZL = 50 Ω —— — IC = 3 mA dB 13.5 15 — IC = 5 mA — 16.3 — OIP3 Out Third - Order Distortion Intercept Point at VCE = 2 V, f = 2 Ghz, ZS = ZL = 50 Ω, IC = 3 mA dBm — 15 — IEBO Emitter to Base Leakage Current at VEBO = 3 V µA — 0.2 1.0 ICBO Collector to Base Leakage Current at VCBO = 3 V µA — 0.2 1.0 ICEO Collector to Emitter Leakage Current, VCEO = 5 V µA — 0.5 2.0 hFE DC Current Gain at VCE = 2 V, IC = 3 mA — 50 90 140 VFBE Base to Emitter Forward Voltage at IBE = 100 µA V 1.0 1.2 1.4 VFBC Base to Collector Forward Voltage at IBE = 100 µA V 0.7 1.0 1.3 NE52118 L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT • HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • OIP3 = 15 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω • 4 PIN SUPER MINI MOLD PACKAGE • GROUNDED EMITTER TRANSISTOR FEATURES PACKAGE DIMENSIONS (Units in mm) PACKAGE OUTLINE 18 ELECTRICAL CHARACTERISTICS (TA = 25°C) PIN CONNECTIONS 1. Emitter 2. Base 3. Emitter 4. Collector California Eastern Laboratories 2.1 ± 0.2 1.25 ± 0.1 1 2 3 0.3 (LEADS 2, 3, 4) 0.3 0.9 ± 0.1 0 to 0.1 0.15 +0.10 -0.05 2.0 ± 0.2 4 0.4 +0.10 -0.05 1.3 +0.10 -0.05 0.65 0.65 0.60 0.65 |
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