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PMBTH81 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMBTH81 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page September 1995 2 Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBTH81 FEATURES • Low cost • High transition frequency. DESCRIPTION The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its complement is the PMBTH10. PINNING PIN DESCRIPTION Code: V31 1 base 2 emitter 3 collector Fig.1 SOT23. fpage MSB003 Top view 12 3 QUICK REFERENCE DATA Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V Ptot total power dissipation Ts =45 °C (note 1) − 400 mW Cce collector-emitter capacitance VCB = 10 V; IB = 0; f = 1 MHz − 0.65 pF Ccb collector-base capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.85 pF fT transition frequency VCE = 10 V; IC = 5 mA; f = 100 MHz; Tamb =25 °C 600 − MHz |
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