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CM350DU-5F Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM350DU-5F
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM350DU-5F Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

  CM350DU-5F Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM350DU-5F Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM350DU-5F Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM350DU-5F Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Sep.1998
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-5
10-4
10-3
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.28°C/W
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-5
10-4
10-3
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.17°C/W
10-1
10-2
10-3
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE


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